Nanocrystalline gallium nitride thin films

Autor:	Indradev Samajdar, A Nisha Preschilla, Raman S. Srinivasa, S.S. Major, N Kumar
Jazyk:	angličtina
Rok vydání:	2000
Předmět:	Materials science Photoluminescence Physics and Astronomy (miscellaneous) Band gap business.industry Route Gallium nitride Substrate (electronics) Sputter deposition Nanocrystalline material chemistry.chemical_compound Blue chemistry Gan Quantum Dots Sputtering Optoelectronics Thin film business
Zdroj:	Scopus-Elsevier
ISSN:	2381-3652 0003-6951
Popis:	Nanocrystalline gallium nitride (GaN) thin films were deposited on quartz substrates by reactive rf sputtering of GaAs target with nitrogen as the reactive cum sputtering gas. X-ray diffraction and transmission electron microscopy confirmed the presence of GaN crystallites with particle size increasing from 3 to 16 nm, as the substrate temperature was increased from 400 to 550 degrees C. The particle size in films grown at temperatures below 550 degrees C were less than the exciton Bohr radius of GaN. The band gap of these films obtained from absorption and photoluminescence measurements showed a blueshift with respect to bulk GaN. (C) 2000 [S0003-6951(00)03138-7].
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::290349dff939b6cdb055a9679ab94cfa http://dspace.library.iitb.ac.in/xmlui/handle/10054/4395 Zobrazit plný text záznamu