Raman Investigation of Aluminum-Doped 4H-SiC
| Autor: | Marcin Zielinski, Leszek Konczewicz, Sylvie Contreras, Jean Camassel, Hervé Peyre, Sandrine Juillaguet, Pawel Kwasnicki |
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| Přispěvatelé: | Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), NOVASiC, Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein, NETFISiC project (Grant No. PITN-GA-2010-264613) |
| Rok vydání: | 2013 |
| Předmět: |
4H-SiC
Materials science media_common.quotation_subject p doping Analytical chemistry chemistry.chemical_element 02 engineering and technology Low frequency 01 natural sciences Asymmetry symbols.namesake Aluminium Distortion 0103 physical sciences General Materials Science Coherent anti-Stokes Raman spectroscopy media_common 010302 applied physics Range (particle radiation) Mechanical Engineering Doping 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Mechanics of Materials Raman spectroscopy [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] symbols SIMS measurements 0210 nano-technology Fano interference effects |
| Zdroj: | Silicon Carbide and Related Materials 2012 ECSCRM 2012 ECSCRM 2012, Sep 2012, Saint-Petersburg, Russia. pp.357-360, ⟨10.4028/www.scientific.net/MSF.740-742.357⟩ |
| ISSN: | 1662-9752 |
| Popis: | Raman scattering spectra have been collected on p-type 4H-SiC samples doped with aluminum up to 5×1019atoms per cubic cm. The distortion and asymmetry of FTA modes which appear in the low frequency range has been probed in great details. We show that, using standard Fano formulae with three parameters per mode, one can successively fit all FTA modes profiles in the concentration range 2×1016– 5×1019Al.cm-3. |
| Databáze: | OpenAIRE |
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