10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology

Autor:	J. Gruenenpuett, Piero Gamarra, Stéphane Piotrowicz, Eric Chartier, J.C. Jacquet, N. Michel, M. Oualli, Sylvain Delage, Christian Dua, Cedric Lacam, P. Altuntas, L. Trinh-Xuan, O. Patard, Christophe Chang, C. Potier
Rok vydání:	2019
Předmět:	Materials science business.industry Amplifier 020208 electrical & electronic engineering Bandwidth (signal processing) Gate length 020206 networking & telecommunications Gallium nitride 02 engineering and technology High-electron-mobility transistor chemistry.chemical_compound chemistry Sic substrate 0202 electrical engineering electronic engineering information engineering Optoelectronics Ka band business Monolithic microwave integrated circuit
Zdroj:	2019 14th European Microwave Integrated Circuits Conference (EuMIC).
DOI:	10.23919/eumic.2019.8909443
Popis:	This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a saturated output power of 40dBm. Each stage uses 8x50μm gate width HEMTs fabricated with a 0.I5μm gate length on 70μm thick SiC substrate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28f3010523f0e0e8ec8c5bd2489bf741 https://doi.org/10.23919/eumic.2019.8909443 Zobrazit plný text záznamu