Above barrier exciton confinement in InGaAs/GaAs multiple-quantum-well structures
| Autor: | Mario Capizzi, M.G. Simeone, M.R. Bruni, Krikor B. Ozanyan, T Worren, Faustino Martelli, A. Frova, Antonio Polimeni |
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| Rok vydání: | 1994 |
| Předmět: |
Photoluminescence
Condensed matter physics Condensed Matter::Other Chemistry Exciton Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Laser linewidth Materials Chemistry Rectangular potential barrier Photoluminescence excitation Electrical and Electronic Engineering Absorption (electromagnetic radiation) Luminescence |
| Zdroj: | ResearcherID |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/0038-1101(94)90265-8 |
| Popis: | Exciton confinement in the GaAs barriers of InGaAs/GaAs multiple-quantum-well structures is demonstrated by luminescence self-absorption and photoluminescence excitation spectroscopies. The confinement energy and absorption linewidth depend on the barrier width as predicted by a plain quantum mechanical model. For thin barriers, a splitting in the experimental lineshape is accounted for by including into the theoretical model the interaction among excitons confined in individual barriers. Evidence for a transition between a hole state in the well and an electron state confined in the barrier is also reported, which provides a direct way for estimating the band offsets. |
| Databáze: | OpenAIRE |
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