Parylene-based memristive crossbar structures with multilevel resistive switching for neuromorphic computing

Autor:	Boris S Shvetsov, Anton A Minnekhanov, Andrey V Emelyanov, Aleksandr I Ilyasov, Yulia V Grishchenko, Maxim L Zanaveskin, Aleksandr A Nesmelov, Dmitry R Streltsov, Timofey D Patsaev, Alexander L Vasiliev, Vladimir V Rylkov, Vyacheslav A Demin
Rok vydání:	2022
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Bioengineering General Chemistry Electrical and Electronic Engineering
Zdroj:	Nanotechnology. 33:255201
ISSN:	1361-6528 0957-4484
DOI:	10.1088/1361-6528/ac5cfe
Popis:	Currently, there is growing interest in wearable and biocompatible smart computing and information processing systems that are safe for the human body. Memristive devices are promising for solving such problems due to a number of their attractive properties, such as low power consumption, scalability, and the multilevel nature of resistive switching (plasticity). The multilevel plasticity allows memristors to emulate synapses in hardware neuromorphic computing systems (NCSs). The aim of this work was to study Cu/poly-p-xylylene(PPX)/Au memristive elements fabricated in the crossbar geometry. In developing the technology for manufacturing such samples, we took into account their characteristics, in particular stable and multilevel resistive switching (at least 10 different states) and low operating voltage (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::28d5076afdfbcd1dd380379fbb3a7bac https://doi.org/10.1088/1361-6528/ac5cfe Zobrazit plný text záznamu