MOVPE growth of N-polar AlN on 4H-SiC Effect of substrate miscut on layer quality
| Autor: | Iurii Kim, Tomas Palacios, Christoffer Kauppinen, Jori Lemettinen, Sami Suihkonen, Hironori Okumura |
|---|---|
| Přispěvatelé: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology. Microsystems Technology Laboratories |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Analytical chemistry FOS: Physical sciences 02 engineering and technology Substrate (electronics) Surface finish Applied Physics (physics.app-ph) Epitaxy A1. X-ray diffraction 01 natural sciences Inorganic Chemistry Root mean square B1. Nitrides 0103 physical sciences Materials Chemistry Metalorganic vapour phase epitaxy ta216 B2. Semiconducting aluminum compounds 010302 applied physics ta114 A1. Polarity Physics - Applied Physics 021001 nanoscience & nanotechnology Condensed Matter Physics A3. Metal-organic vapor phase epitaxy Polar 0210 nano-technology Layer (electronics) Hillock |
| Zdroj: | arXiv |
| ISSN: | 0022-0248 |
| Popis: | We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards 〈1¯100〉 by metal-organic vapor phase epitaxy (MOVPE). The optimal V/III ratios for high-quality AlN growth on 1° and 4° miscut substrates were found to be 20,000 and 1000, respectively. MOVPE grown N-polar AlN layer without hexagonal hillocks or step bunching was achieved using a 4H-SiC substrate with an intentional miscut of 1° towards 〈1¯100〉. The 200-nm-thick AlN layer exhibited X-ray rocking curve full width half maximums of 203 arcsec and 389 arcsec for (0 0 2) and (1 0 2) reflections, respectively. The root mean square roughness was 0.4 nm for a 2 μm×2μm atomic force microscope scan. Academy of Finland (grant 297916) Aalto University Science and Technology Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant no. 16H06424) Japan Society for the Promotion of Science. Grant-in-Aid for Scientific Research (Grant no. 17K14110) |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect