Design Space of Negative Capacitance in FETs
| Autor: | Amin Rassekh, Farzan Jazaeri, Jean-Michel Sallese |
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| Předmět: |
drain current
model mosfet capacitance charges mfis Condensed Matter::Mesoscopic Systems and Quantum Hall Effect electric fields Computer Science Applications charge-based model Condensed Matter::Materials Science instability hysteresis gate junctionless fets logic gates insulators Electrical and Electronic Engineering semiconductor device modeling negative capacitance |
| Popis: | Relying on the previously developed charge-based approaches, this paper presents a physics-based design space of negative capacitance in double-gate and bulk MOSFET architectures. The impact of thickness variation of the ferroelectric on the DC characteristics has been deeply investigated. The model precisely estimates a critical thickness of ferroelectric at instability conditions before the device goes into the hysteresis regime. Explicit relationships have been driven for hysteresis voltages which can be used as a general guideline for technology optimization of negative capacitance FETs. |
| Databáze: | OpenAIRE |
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