Field Effect Transistors for Terahertz Detection and Emission

Autor: Wojciech Knap, Salman Nadar, Hadley Videlier, Stephane Boubanga-Tombet, Dominique Coquillat, Nina Dyakonova, Frederic Teppe, Kristoph Karpierz, Jerzy Łusakowski, Maciej Sakowicz, Irmantas Kasalynas, Dalius Seliuta, Gintaras Valusis, Taiichi Otsuji, Yahya Meziani, Abdel El Fatimy, Simon Vandenbrouk, Kamel Madjour, Didier Théron, Christophe Gaquière
Přispěvatelé: Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Groupe d'étude des semiconducteurs (GES), Université Montpellier 2 - Sciences et Techniques (UM2)-Centre National de la Recherche Scientifique (CNRS), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2 - Sciences et Techniques (UM2)
Jazyk: angličtina
Rok vydání: 2011
Předmět:
PLASMON MODES
Terahertz radiation
Physics::Optics
02 engineering and technology
Radiation
01 natural sciences
law.invention
Imaging
Stress (mechanics)
Computer Science::Hardware Architecture
Condensed Matter::Materials Science
Computer Science::Emerging Technologies
law
0103 physical sciences
Classical electromagnetism
Electrical and Electronic Engineering
Instrumentation
010302 applied physics
Physics
business.industry
Transistor
ELECTRON-MOBILITY TRANSISTORS
021001 nanoscience & nanotechnology
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
[PHYS.PHYS.PHYS-GEN-PH]Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]
Magnetic field
Field-effect transistors
Plasma waves
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Terahertz detector
Optoelectronics
RADIATION
Field-effect transistor
0210 nano-technology
business
TeraHertz detectors
Zdroj: Journal of Infrared, Millimeter and Terahertz Waves
Journal of Infrared, Millimeter and Terahertz Waves, Springer Verlag, 2011, 32 (5), pp.618-628. ⟨10.1007/s10762-010-9647-7⟩
Journal of Infrared, Millimeter and Terahertz Waves, 2010, 32, pp.618-628. ⟨10.1007/s10762-010-9647-7⟩
Journal of Infrared, Millimeter and Terahertz Waves, Springer Verlag, 2010, 32, pp.618-628. ⟨10.1007/s10762-010-9647-7⟩
ISSN: 1866-6892
1866-6906
DOI: 10.1007/s10762-010-9647-7⟩
Popis: DOI = 10.1007/s10762-010-9647-7; Resonant frequencies of the two-dimensional plasma in field effect transistors (FETs) increase with the reduction of the channel dimensions and can reach the Terahertz (THz) range. Nonlinear properties of the plasma/electron gas in the transistor channel can be used for the rectification and detection of THz radiation. The excitation of plasma waves by sub-THz and THz radiation was demonstrated for short gate transistors at cryogenic temperatures. At room temperature plasma oscillations are usually overdamped, but the FETs can still operate as efficient broadband rectifiers/detectors in the THz range. We present a few recent experimental results on THz detection by FETs showing some new ways of improvement of FETs for THz imaging at room temperature as well as the new physical phenomena like detection in quantizing magnetic fields. We also demonstrate THz emission properties of GaN based FETs.
Databáze: OpenAIRE
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