Czochralski growth techniques of germanium crystals grown from a melt covered partially or fully by liquid B2O3
| Autor: | Ichiro Yonenaga, Yoshio Hashimoto, Takayuki Ohsawa, Yu Murao, Hideaki Ise, Toshinori Taishi |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element Crucible Germanium Condensed Matter Physics Czochralski method Semiconducting germanium Catalysis Inorganic Chemistry Crystal Crystallography Oxygen atom chemistry Boron oxide Materials Chemistry Doping Limiting oxygen concentration Dislocation Impurities |
| Zdroj: | Journal of Crystal Growth. 360:47-51 |
| ISSN: | 0022-0248 |
| Popis: | We propose two unique Czochralski (CZ) techniques for growing germanium (Ge) crystals with an extremely low dislocation density and high interstitial oxygen concentration ([Oi]) using boron oxide (B2O3) and a silica crucible. When a Ge melt is partially covered with liquid B2O3, but only on the outer region of the melt surface, germanium-oxide (GeO2)-related particles forming naturally in the melt are effectively dissolved by the liquid B2O3. The clean central portion of the melt produces dislocation-free undoped or Ga-doped Ge crystals. In addition, Ge crystals with [Oi] up to 6 x 10(17) cm(-3) can be grown from a melt fully covered by liquid B2O3 with added GeO2 powder. The reaction and transportation of oxygen atoms during the growth process using B2O3 was investigated, revealing that liquid B2O3 acts like a catalyst without heavy contamination of the growing Ge crystal by B and Si atoms. (C) 2011 Elsevier B.V. All rights reserved. JOURNAL OF CRYSTAL GROWTH. 360:47-51 (2012) |
| Databáze: | OpenAIRE |
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