Engineering of the spin on dopant process on silicon on insulator substrate
| Autor: | Erfan Mafakheri, Giulio Tavani, Alexey Fedorov, Michele Perego, Mario Lodari, Andrea Barzaghi, Daniel Chrastina, Chiara Barri, Elisa Arduca, Francesco Scotognella, Luca Fagiani, Marco Abbarchi, Jacopo Frigerio, Monica Bollani |
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| Přispěvatelé: | Dipartimento di Fisica [Politecnico Milano] (POLIMI), Politecnico di Milano [Milan] (POLIMI), CNR Institute for Photonics and Nanotechnologies (IFN), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Delft University of Technology (TU Delft), Institute for Microelectronics and Microsystems (IMM ), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Electron mobility
Materials science Annealing (metallurgy) SOI doping spin on dopant four-probe SOI doping P diffusion ToF-SIMS Silicon on insulator Bioengineering 02 engineering and technology 010402 general chemistry 01 natural sciences 7. Clean energy Condensed Matter::Materials Science Condensed Matter::Superconductivity General Materials Science Electrical measurements SOD Electrical and Electronic Engineering Thin film P doping Dopant business.industry Four-probe Mechanical Engineering Doping Spin on dopant General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences P diffusion Semiconductor Mechanics of Materials silicon on insulator [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Optoelectronics 0210 nano-technology business ToF-SIMS |
| Zdroj: | Nanotechnology, 32(2) Nanotechnology Nanotechnology (Bristol, Online) (2021). doi:10.1088/1361-6528/abbdda info:cnr-pdr/source/autori:Chiara Barri, Erfan Mafakheri, Luca Fagiani, Giulio Tavani, Andrea Barzaghi, Daniel Chrastina, Alexey Fedorov, Jacopo Frigerio, Mario Lodari, Francesco Scotognella, Elisa Arduca, Marco Abbarchi, Michele Perego, Monica Bollani/titolo:Engineering of the spin on dopant process on silicon on insulator substrate/doi:10.1088%2F1361-6528%2Fabbdda/rivista:Nanotechnology (Bristol, Online)/anno:2021/pagina_da:/pagina_a:/intervallo_pagine:/volume Nanotechnology, 2020, 32 (2), pp.025303 |
| ISSN: | 0957-4484 0021-4922 0268-1242 0022-3727 0953-8984 0013-4651 1361-6528 |
| DOI: | 10.1088/1361-6528/abbdda |
| Popis: | We report on a systematic analysis of phosphorus diffusion in silicon on insulator thin film via spin-on-dopant process (SOD). This method is used to provide an impurity source for semiconductor junction fabrication. The dopant is first spread into the substrate via SOD and then diffused by a rapid thermal annealing process. The dopant concentration and electron mobility were characterized at room and low temperature by four-probe and Hall bar electrical measurements. Time-of-flight-secondary ion mass spectroscopy was performed to estimate the diffusion profile of phosphorus for different annealing treatments. We find that a high phosphorous concentration (greater than 1020 atoms cm−3) with a limited diffusion of other chemical species and allowing to tune the electrical properties via annealing at high temperature for short time. The ease of implementation of the process, the low cost of the technique, the possibility to dope selectively and the uniform doping manufactured with statistical process control show that the methodology applied is very promising as an alternative to the conventional doping methods for the implementation of optoelectronic devices. |
| Databáze: | OpenAIRE |
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