Highly Efficient Single-Layer Polymer Ambipolar Light-Emitting Field-Effect Transistors
| Autor: | Michael C. Gwinner, Matthew Roberts, Henning Sirringhaus, Bodo H. Wallikewitz, Christopher R. McNeill, Richard H. Friend, Dinesh Kabra, Thomas J. K. Brenner |
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| Rok vydání: | 2012 |
| Předmět: |
Quenching
Materials science Light Transistors Electronic Polymers business.industry Ambipolar diffusion Mechanical Engineering Transistor Electrostatics law.invention Organic semiconductor Mechanics of Materials law OLED Polymethyl Methacrylate Optoelectronics General Materials Science Light emission Field-effect transistor Zinc Oxide business |
| Zdroj: | Advanced Materials. 24:2728-2734 |
| ISSN: | 0935-9648 |
| DOI: | 10.1002/adma.201104602 |
| Popis: | Single-layer polymer light-emitting field-effect transistors (LEFETs) that yield EQEs of >8% and luminance efficiencies >28 cd A(-1) are demonstrated. These values are the highest reported for LEFETs and amongst the highest values for fluorescent OLEDs. Due to the electrostatics of the ambipolar LEFET channel, LEFETs provide an inherent advantage over OLEDs in terms of minimizing exciton-polaron quenching. |
| Databáze: | OpenAIRE |
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