Enhancing the Curie Temperature of Ferromagnetic Semiconductor (Ga,Mn)As to 200 K via Nanostructure Engineering
| Autor: | Stephan von Molnár, Fuhua Yang, Jennifer Misuraca, Jianhua Zhao, Xiang Yang, Peng Xiong, Lin Chen |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
Magnetoresistance Surface Properties Annealing (metallurgy) Nanowire Gallium Bioengineering Arsenicals Magnetics Hall effect Nanotechnology General Materials Science Manganese Condensed matter physics business.industry Mechanical Engineering Temperature General Chemistry Magnetic semiconductor Condensed Matter Physics Nanostructures Semiconductor Semiconductors Ferromagnetism Curie temperature business |
| Zdroj: | Nano Letters. 11:2584-2589 |
| ISSN: | 1530-6992 1530-6984 |
| Popis: | We demonstrate by magneto-transport measurements that a Curie temperature as high as 200 K can be obtained in nanostructures of (Ga,Mn)As. Heavily Mn-doped (Ga,Mn)As films were patterned into nanowires and then subject to low-temperature annealing. Resistance and Hall effect measurements demonstrated a consistent increase of T(C) with decreasing wire width down to about 300 nm. This observation is attributed primarily to the increase of the free surface in the narrower wires, which allows the Mn interstitials to diffuse out at the sidewalls, thus enhancing the efficiency of annealing. These results may provide useful information on optimal structures for (Ga,Mn)As-based nanospintronic devices operational at relatively high temperatures. |
| Databáze: | OpenAIRE |
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