X-Ray Photoelectron Spectroscopy Depth Profiling of As-Grown and Annealed Titanium Nitride Thin Films
| Autor: | Monzer Maarouf, Muhammad B. Haider, Mogtaba B. Mekki, Qasem Ahmed Drmosh |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
X-ray photoelectron spectroscopy
Materials science Annealing (metallurgy) General Chemical Engineering Analytical chemistry chemistry.chemical_element 02 engineering and technology 01 natural sciences Inorganic Chemistry chemistry.chemical_compound Crystallinity Sputtering 0103 physical sciences lcsh:QD901-999 thin film semiconductors General Materials Science Thin film 010302 applied physics atomic force microscopy magnetron sputtering Sputter deposition 021001 nanoscience & nanotechnology Condensed Matter Physics Titanium nitride titanium nitride chemistry lcsh:Crystallography 0210 nano-technology Tin |
| Zdroj: | Crystals Volume 11 Issue 3 Crystals, Vol 11, Iss 239, p 239 (2021) |
| ISSN: | 2073-4352 |
| DOI: | 10.3390/cryst11030239 |
| Popis: | Titanium nitride thin films were grown on Si(001) and fused silica substrates by radio frequency reactive magnetron sputtering. Post-growth annealing of the films was performed at different temperatures from 300 °C to 700 °C in nitrogen ambient. Films annealed at temperatures above 300 °C exhibit higher surface roughness, smaller grain size and better crystallinity compared to the as-grown film. Bandgap of the films decreased with the increase in the annealing temperature. Hall effect measurements revealed that all the films exhibit n-type conductivity and had high carrier concentration, which also increased slightly with the increase in the annealing temperature. A detailed depth profile study of the chemical composition of the film was performed by x-ray photoelectron spectroscopy confirming the formation of Ti-N bond and revealing the presence of chemisorbed oxygen in the films. Annealing in nitrogen ambient results in increased nitrogen vacancies and non-stoichiometric TiN films. |
| Databáze: | OpenAIRE |
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