Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates
| Autor: | Franz-Josef Tegude, K. Heime, U. Auer, Jürgen Kluth, Jürgen Berntgen, W. Daumann, Alexander Behres |
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| Jazyk: | angličtina |
| Rok vydání: | 2000 |
| Předmět: |
Materials science
Condensed matter physics Phonon scattering business.industry Doping Transistor Heterojunction Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Lattice (order) Compound semiconductor Optoelectronics Electrical and Electronic Engineering Safety Risk Reliability and Quality Fermi gas business Quantum well Elektrotechnik |
| Popis: | The 1/ f noise of various InGaAs layers lattice matched to InP is investigated systematically at room temperature. To elucidate the origin of the 1/ f noise in this type of III–V compound semiconductor, thick n-type doped InGaAs layers, typical InP based InAlAs/InGaAs or InP/InGaAs heterostrucuture field-effect transistor (HFET) structures, respectively, as well as InP based InAlAs/InGaAs quantum well structures with doped InGaAs two-dimensional electron gas (2DEG) channel are analysed. From the experiments it is found that mobility fluctuation is the only origin for the 1/ f noise observed both in InGaAs bulk material and in 2DEG heterostructures of high quality. A Hooge parameter attributed to phonon scattering α H phon in the bulk material is found to be about 7×10 −6 and agrees with those obtained from HFET structures with the highest mobilities ( α H ≈1.5×10 −5 ). Furthermore, the Hooge parameter of 2DEG structures strongly depends on the channel design and on the doping concentration in the n-type doped 2DEG channels. |
| Databáze: | OpenAIRE |
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