In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study
| Autor: | Geetanjali Deokar, S. Steydli, C. Deville Cavellin, Fausto Sirotti, Mathieu G. Silly, M. D'angelo, A. Pongrácz, B. Pécz |
|---|---|
| Přispěvatelé: | Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), Synchrotron SOLEIL (SSOLEIL), Centre National de la Recherche Scientifique (CNRS), ``Erasmus Mundus' fellowship program, OTKA [75735] |
| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
In situ
Silicon Materials science Annealing (metallurgy) Photoemission spectroscopy Analytical chemistry chemistry.chemical_element 02 engineering and technology Silicon carbide Nanocrystal 01 natural sciences chemistry.chemical_compound 0103 physical sciences Materials Chemistry Molecule [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] Carbon monoxide 010302 applied physics Silica Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Crystallography chemistry 0210 nano-technology |
| Zdroj: | Surface Science Surface Science, Elsevier, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩ Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces, 2012, 606 (7-8), pp.697-701. ⟨10.1016/j.susc.2011.12.006⟩ |
| ISSN: | 0039-6028 1879-2758 |
| DOI: | 10.1016/j.susc.2011.12.006⟩ |
| Popis: | International audience; We have studied CO interaction with SiO2/Si system at high temperature (similar to 1100 degrees C) and 350 mbar by corelevel photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 Si -> SiO2 + 2SiC + SiO2C2. (C) 2012 Elsevier B.V. All rights reserved. |
| Databáze: | OpenAIRE |
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