Synthetic WSe2 monolayers with high photoluminescence quantum yield
| Autor: | Ali Javey, Joy Cho, Yingbo Zhao, Catherine Groschner, Matin Amani, Daryl C. Chrzan, Der Hsien Lien, James P. Mastandrea, Joel W. Ager, Geun Ho Ahn, Hyungjin Kim, Mary Scott |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Multidisciplinary
Materials science Photoluminescence business.industry Materials Science Quantum yield SciAdv r-articles Substrate (electronics) Chemical vapor deposition chemistry.chemical_compound Transition metal chemistry Monolayer Hardware_INTEGRATEDCIRCUITS Figure of merit Tungsten diselenide Optoelectronics business Research Articles Research Article |
| Zdroj: | Science Advances Science advances, vol 5, iss 1 |
| ISSN: | 2375-2548 |
| Popis: | A simple substrate decoupling method with optimized growth conditions enables a high-quality synthetic monolayer semiconductor. In recent years, there have been tremendous advancements in the growth of monolayer transition metal dichalcogenides (TMDCs) by chemical vapor deposition (CVD). However, obtaining high photoluminescence quantum yield (PL QY), which is the key figure of merit for optoelectronics, is still challenging in the grown monolayers. Specifically, the as-grown monolayers often exhibit lower PL QY than their mechanically exfoliated counterparts. In this work, we demonstrate synthetic tungsten diselenide (WSe2) monolayers with PL QY exceeding that of exfoliated crystals by over an order of magnitude. PL QY of ~60% is obtained in monolayer films grown by CVD, which is the highest reported value to date for WSe2 prepared by any technique. The high optoelectronic quality is enabled by the combination of optimizing growth conditions via tuning the halide promoter ratio, and introducing a simple substrate decoupling method via solvent evaporation, which also mechanically relaxes the grown films. The achievement of scalable WSe2 with high PL QY could potentially enable the emergence of technologically relevant devices at the atomically thin limit. |
| Databáze: | OpenAIRE |
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