Thermal Stability of Nickel Silicide Films

Autor:	S. R. Das, Dan-Xia Xu, A.A. Naem, L. Lebrun, M. Nournia
Rok vydání:	1996
Předmět:	Nickel Materials science chemistry Annealing (metallurgy) Phase (matter) Doping chemistry.chemical_element Process window Thermal stability Composite material Nitrogen Sheet resistance
Zdroj:	MRS Proceedings. 427
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-427-541
Popis:	In view of their potential application in ULSI technology, nickel silicide films were formed on undoped and doped Si(100) substrates. Nickel films of varying thicknesses were sputter-deposited onto the substrates and silicidation was performed ex-situ by rapid thermal annealing in nitrogen ambient. The electrical sheet resistance of the silicides was studied as a function of film thickness and annealing temperature. The process window for forming the NiSi phase and the thermal stability of the NiSi phase were determined as a function of film thickness. 1996 MRS Spring Meeting: Symposium K: Advanced Metallization for Future ULSI, April 8-12, 1996, San Francisco, CA, USA Series: Materials Research Society Symposium Proceedings; no. 427
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2758a440c1c18e605899e9caea29d4c8 https://doi.org/10.1557/proc-427-541 Zobrazit plný text záznamu Full text from SpringerLink