Graphene nanomesh transistor with high on/off ratio and good saturation behavior
| Autor: | C. Chassat, Damien Querlioz, Salim Berrada, Arnaud Bournel, Alfonso Alarcón, Jérôme Saint-Martin, Viet Hung Nguyen, Philippe Dollfus |
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| Přispěvatelé: | Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), University of Trento [Trento], Centre de Nanosciences et de Nanotechnologies [Orsay] (C2N), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), saint-martin, Jérôme |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Transconductance [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Thermionic emission 02 engineering and technology 7. Clean energy 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS 010302 applied physics Condensed matter physics Graphene Transistor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Cutoff frequency [SPI.TRON] Engineering Sciences [physics]/Electronics [SPI.TRON]Engineering Sciences [physics]/Electronics Nanomesh chemistry Field-effect transistor 0210 nano-technology Graphene nanoribbons |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2013, 103 (18), pp.183509 Applied Physics Letters, American Institute of Physics, 2013, 103 (18), ⟨10.1063/1.4828496⟩ |
| ISSN: | 0003-6951 |
| DOI: | 10.1063/1.4828496⟩ |
| Popis: | We investigate the device operation and performance of transistors based on a graphene nanomesh lattice. By means of numerical simulation, we show that this device architecture allows suppressing the chiral tunneling, which reduces drastically the off current and enhances the on/off ratio compared to the pristine graphene counterpart. Additionally, a good saturation of current can be reached in the thermionic regime of transport. Though reduced compared to the case of pristine transistors, the transconductance and the cutoff frequency are still high. Above all, the nanomesh transistors outperform their pristine graphene counterpart in terms of voltage gain and maximum oscillation frequency. |
| Databáze: | OpenAIRE |
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