Gigahertz Field-Effect Transistors with CMOS-Compatible Transfer-Free Graphene
| Autor: | Po-Wen Chiu, Chao-Hui Yeh, Shawn S. H. Hsu, Yu-Chiao Chiu, Po-Yuan Teng, Wen-Ting Hsiao |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
business.industry Graphene Interface (computing) Frequency multiplier 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention law Transfer (computing) 0103 physical sciences Optoelectronics General Materials Science Field-effect transistor 010306 general physics 0210 nano-technology business Frequency mixer Cmos compatible |
| Zdroj: | ACS Applied Materials & Interfaces. 11:6336-6343 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | High-quality graphene grown on metal-free substrates represents a vital milestone that provides an atomic clean interface and a complementary metal-oxide-semiconductor-compatible manufacturing process for electronic applications. We report a scalable approach to fabricate radio frequency field-effect transistors with a graphene channel grown directly on the sapphire substrate using the technique of remote-catalyzed chemical vapor deposition (CVD). A mushroom-shaped AlO |
| Databáze: | OpenAIRE |
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