Predicting the structural, electronic and magnetic properties of few atomic-layer polar perovskite

Autor: Jinrong Cheng, N. V. Ter-Oganessian, Shixun Cao, Shunbo Hu, Alexander P. Pyatakov, Jincang Zhang, Fanhao Jia, Shaowen Xu, Wei Ren, A. Sundaresan
Rok vydání: 2021
Předmět:
Zdroj: Physical Chemistry Chemical Physics. 23:5578-5582
ISSN: 1463-9084
1463-9076
Popis: Density functional theory (DFT) calculations are performed to predict the structural, electronic and magnetic properties of electrically neutral or charged few-atomic-layer (AL) oxides whose parent systems are based on polar perovskite $KTaO_{3}$. Their properties vary greatly with the number of ALs ($n_{AL}$) and the stoichiometric ratio. In the few-AL limit ($n_{AL}\leqslant 14$), the even AL (EL) systems with chemical formula $(KTaO_{3})_{n}$ are semiconductors, while the odd AL (OL) systems with formula ($K_{n+1}Ta_{n}O_{3n+1}$ or $K_{n}Ta_{n+1}O_{3n+2}$) are half-metal except for the unique $KTa_{2}O_{5}$ case which is a semiconductor due to the large Peierls distortions. After reaching certain critical thickness ($n_{AL}>14$), the EL systems show ferromagnetic surface states, while ferromagnetism disappears in the OL systems. These predictions from fundamental complexity of polar perovskite when approaching the two-dimensional (2D) limit may be helpful for interpreting experimental observations later.
Phys. Chem. Chem. Phys., 2021
Databáze: OpenAIRE