Scanning capacitance microscopy registration of buried atomic-precision donor devices

Autor: Malcolm S. Carroll, E. Langlois, S. M. Carr, Michael Lilly, Ganapathi S. Subramania, Tammy Pluym, Ezra Bussmann, Jason Dominguez, Shashank Misra, Martin Rudolph
Rok vydání: 2015
Předmět:
Zdroj: Nanotechnology. 26(8)
ISSN: 1361-6528
Popis: We show that a scanning capacitance microscope (SCM) can image buried delta-doped donor nanostructures fabricated in Si via a recently developed atomic-precision scanning tunneling microscopy (STM) lithography technique. A critical challenge in completing atomic-precision nanoelectronic devices is to accurately align mesoscopic metal contacts to the STM defined nanostructures. Utilizing the SCMs ability to image buried dopant nanostructures, we have developed a technique by which we are able to position metal electrodes on the surface to form contacts to underlying STM fabricated donor nanostructures with a measured accuracy of 300 nm. Low temperature (T = 4 K) transport measurements confirm successful placement of the contacts to the donor nanostructures.
Databáze: OpenAIRE