Supplementary document for 640 nm red InGaN nanowire LED with external quantum efficiency of 2.3% directly grown on p-Si (111) - 6354286.pdf
| Autor: | Pan, Xingchen, Song, Jiaxun, Hong, Hao, Luo, Mingrui, Noetzel, Richard |
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| Rok vydání: | 2023 |
| DOI: | 10.6084/m9.figshare.22592914.v2 |
| Popis: | Supplemental Materials |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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