Developing high-transmittance heterojunction diodes based on NiO/TZO bilayer thin films
| Autor: | Hong-Hsin Huang, Fang-Hsing Wang, Chia-Ching Wu, Cheng-Fu Yang, Chia-Cheng Huang |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Nano Express business.industry Scanning electron microscope Titanium-doped zinc oxide Non-blocking I/O Nanochemistry Nanotechnology Heterojunction Sputter deposition Space-charge limited current Condensed Matter Physics Heterojunction diode Materials Science(all) Hall effect Optoelectronics General Materials Science Thin film business Nickel oxide Deposition (law) |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1931-7573 |
| Popis: | In this study, radio frequency magnetron sputtering was used to deposit nickel oxide thin films (NiO, deposition power of 100 W) and titanium-doped zinc oxide thin films (TZO, varying deposition powers) on glass substrates to form p(NiO)-n(TZO) heterojunction diodes with high transmittance. The structural, optical, and electrical properties of the TZO and NiO thin films and NiO/TZO heterojunction devices were investigated with scanning electron microscopy, X-ray diffraction (XRD) patterns, UV-visible spectroscopy, Hall effect analysis, and current-voltage (I-V) analysis. XRD analysis showed that only the (111) diffraction peak of NiO and the (002) and (004) diffraction peaks of TZO were observable in the NiO/TZO heterojunction devices, indicating that the TZO thin films showed a good c-axis orientation perpendicular to the glass substrates. When the sputtering deposition power for the TZO thin films was 100, 125, and 150 W, the I-V characteristics confirmed that a p-n junction characteristic was successfully formed in the NiO/TZO heterojunction devices. We show that the NiO/TZO heterojunction diode was dominated by the space-charge limited current theory. |
| Databáze: | OpenAIRE |
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