Evidence for chiral superconductivity on a silicon surface

Autor: F. Ming, X. Wu, C. Chen, K. D. Wang, P. Mai, T. A. Maier, J. Strockoz, J. W. F. Venderbos, C. González, J. Ortega, S. Johnston, H. H. Weitering
Přispěvatelé: UAM. Departamento de Física de la Materia Condensada
Rok vydání: 2022
Předmět:
DOI: 10.48550/arxiv.2210.06273
Popis: Tin adatoms on a Si(111) substrate with a one-third monolayer coverage form a two-dimensional triangular lattice with one unpaired electron per site. These electrons order into an antiferromagnetic Mott-insulating state, but doping the Sn layer with holes creates a two-dimensional conductor that becomes superconducting at low temperatures. Although the pairing symmetry of the superconducting state is currently unknown, the combination of repulsive interactions and frustration inherent in the triangular adatom lattice opens up the possibility of a chiral order parameter. Here we study the superconducting state of Sn/Si(111) using scanning tunnelling microscopy, scanning tunnelling spectroscopy and quasiparticle interference imaging. We find evidence for a doping-dependent superconducting critical temperature with a fully gapped order parameter, the presence of time-reversal symmetry breaking and a strong enhancement in zero-bias conductance near the edges of the superconducting domains. Although each individual piece of evidence could have a more mundane interpretation, our combined results suggest the possibility that Sn/Si(111) is an unconventional chiral d-wave superconductor
Databáze: OpenAIRE