Capacitance modeling of laterally non-uniform MOS devices
| Autor: | A.C.T. Aarts, A.J. Scholten, M.B. Willemsen, R. van der Hout, J.C.J. Paasschens, D.B.M. Klaassen |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
business.industry Transistor Semiconductor device modeling Charge (physics) Hardware_PERFORMANCEANDRELIABILITY Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Capacitance law.invention Terminal (electronics) Hardware_GENERAL law MOSFET Turn (geometry) Hardware_INTEGRATEDCIRCUITS Optoelectronics business Hardware_LOGICDESIGN Communication channel |
| Zdroj: | Scopus-Elsevier |
| DOI: | 10.1109/iedm.2004.1419281 |
| Popis: | In compact transistor modeling for circuit simulation, the capacitances of conventional MOS devices are commonly determined as the derivatives of terminal charges, which on their turn are obtained from the so-called Ward-Dutton charge partitioning scheme (Ward, 1981). For devices with a laterally non-uniform channel doping profile, however, it is shown in this paper that: 1) no terminal charges exist for the description of capacitances. Instead, 2) a model is presented for the capacitances of such devices, including numerical results for a MOS transistor with a laterally diffused channel doping profile. Finally, 3) a method is given to incorporate such a capacitance model in circuit simulators which are traditionally based on terminal charge models. |
| Databáze: | OpenAIRE |
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