Tunnel field-effect transistors with graphene channels
| Autor: | V. F. Lukichev, R. Oechsner, V. Vyurkov, A. Burenkov, A. A. Orlikovsky, Dmitry Svintsov |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Digital electronics
Materials science business.industry Graphene Transistor Nanotechnology Thermionic emission Hardware_PERFORMANCEANDRELIABILITY Dielectric Condensed Matter Physics Subthreshold slope Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Semiconductor Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor business Hardware_LOGICDESIGN |
| Popis: | The lack of an OFF-state has been the main obstacle to the application of graphene-based transistors in digital circuits. Recently vertical graphene tunnel field-effect transistors with a low OFF-state current have been reported; however, they exhibited a relatively weak effect of gate voltage on channel conductivity. We propose a novel lateral tunnel graphene transistor with the channel conductivity effectively controlled by the gate voltage and the subthreshold slope approaching the thermionic limit. The proposed transistor has a semiconductor (dielectric) tunnel gap in the channel operated by gate and exhibits both high ON-state current inherent to graphene channels and low OFF-state current inherent to semiconductor channels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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