Thin layer etching of low-k SiCO spacer using hydrogen ion implantation followed by hydrofluoric acid
| Autor: | Olivier Pollet, G. Audoit, C. Guedj, Sébastien Barnola, Daniel Benoit, Maxime Garcia-Barros, Francois Leverd, Audrey Jannaud, Nicolas Posseme |
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| Přispěvatelé: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), STMicroelectronics [Crolles] (ST-CROLLES), Département Plate-Forme Technologique (DPFT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), SERMA Technologies |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Plasma parameters Silicon on insulator 02 engineering and technology 01 natural sciences chemistry.chemical_compound [SPI]Engineering Sciences [physics] Hydrofluoric acid X-ray photoelectron spectroscopy Etching (microfabrication) 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering Instrumentation 010302 applied physics business.industry Process Chemistry and Technology Wet cleaning Biasing 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩ Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures, American Vacuum Society (AVS), 2018, 36 (5), pp.052201. ⟨10.1116/1.5038617⟩ |
| ISSN: | 0734-211X 1520-8567 |
| Popis: | International audience; Spacer etching realization is considered today as one of the most critical processes for the fully depleted silicon on insulator devices realization. The challenge arises from the fact that low-k spacer needs to be introduced to improve device performances. In this paper, a new approach to etch the low-k SiCO film was investigated. This approach is based on the SiCO film modification by H-2 plasma followed by a removal step of this modified layer using hydrofluoric acid- (HF) based wet cleaning. It has been demonstrated that SiCO layer modification depth is controlled by plasma parameters like bias voltage. The SiCO film modification induced by H-2 plasma has been well understood by x-ray photoelectron spectroscopy, infrared spectroscopy analyses in transmission or in multi-internal reflection. It has been demonstrated that the H-2 plasma exposure converts the SiCO film in volume into an SiOxHy film, explaining the higher damaged film removal rate when dipped in liquid phase HF. Finally, the compatibility of the new etch approach with the SiCO low-k film has been demonstrated on pattern structures. |
| Databáze: | OpenAIRE |
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