Structural properties of Si nanocrystals: implications for light emitting devices fabrication

Autor:	A. Irrera 1, G. Franzò 1, M. Miritello 1, R. Lo Savio 1, S. Boninelli 1, F. Priolo 1, F. Iacona 2, G, Nicotra 2, C. Bongiorno 2, C. Spinella 2, S. Coffa 3
Jazyk:	angličtina
Rok vydání:	2008
Předmět:	Fabrication Materials science Silicon business.industry chemistry.chemical_element Sputter deposition Electroluminescence chemistry Sputtering Plasma-enhanced chemical vapor deposition Optoelectronics Thin film business Silicon oxide
Zdroj:	Group IV Photonics, 2008 5th IEEE International Conference on, pp. 38–40, Sorrento (Italy), 17-19 Sept. 2008 info:cnr-pdr/source/autori:A. Irrera 1, G. Franzò 1, M. Miritello 1, R. Lo Savio 1, S. Boninelli 1, F. Priolo 1, F. Iacona 2, G, Nicotra 2, C. Bongiorno 2, C. Spinella 2, S. Coffa 3/congresso_nome:Group IV Photonics, 2008 5th IEEE International Conference on/congresso_luogo:Sorrento (Italy)/congresso_data:17-19 Sept. 2008/anno:2008/pagina_da:38/pagina_a:40/intervallo_pagine:38–40
Popis:	In this work we investigate and compare the structural and optical properties of silicon-rich silicon oxide layers obtained by different deposition techniques, namely plasma enhanced chemical vapor deposition (PECVD) and RF magnetron sputtering. We demonstrate that, in contrast to what generally believed, properties of films grown by different methods are indeed very different as a result of the agglomeration properties. These data have also great implications on the performances of light emitting MOS devices whose active layer has been prepared by the two different techniques.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25af54fc0c23b5e38a77f53c2ed39a31 http://www.cnr.it/prodotto/i/254694 Zobrazit plný text záznamu