Morphology modifcation of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm
| Autor: | Ahmed Gharbi, Karl-Heinz Heinig, Johannes von Borany, Hans-Jürgen Engelmann, Wolfhard Möller, Raluca Tiron, Nico Klingner, Gregor Hlawacek, Xiaomo Xu |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
chemistry.chemical_element FOS: Physical sciences 02 engineering and technology Applied Physics (physics.app-ph) Binary collision approximation 01 natural sciences Ion Physics::Fluid Dynamics Condensed Matter::Materials Science Sputtering 0103 physical sciences Materials Chemistry Irradiation ion beam damage Electrical and Electronic Engineering Composite material Monte Carlo simulation Helium Nanopillar 010302 applied physics Condensed Matter - Materials Science sub-10 nm fabrication Materials Science (cond-mat.mtrl-sci) Physics - Applied Physics 021001 nanoscience & nanotechnology Condensed Matter Physics amorphization Electronic Optical and Magnetic Materials chemistry Transmission electron microscopy helium ion microscopy 0210 nano-technology Field ion microscope |
| Zdroj: | Semiconductor Science and Technology 35(2020)1, 015021 Semiconductor Science and Technology |
| ISSN: | 0957-4484 |
| DOI: | 10.48550/arxiv.1906.09975 |
| Popis: | Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne+ beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing. While at room temperature, the nanopillars evolve to a conical shape due to ion-induced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of ∼10 nm in a well-controlled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation. |
| Databáze: | OpenAIRE |
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