Potential sources of degradation in InGaAs/GaAs laser diodes
| Autor: | U. Richter, A. Klein, G. Beister, S. S. Ruvimov, I. Rechenberg, M. Pilatzek, Markus Weyers, Frank Bugge, H. Treptow, S. Gramlich, J. Maege, G. Erbert |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Mineralogy Semiconductor device Carrier lifetime Condensed Matter Physics Laser Crystallographic defect law.invention chemistry.chemical_compound chemistry Mechanics of Materials law Microelectronics Optoelectronics General Materials Science Indium arsenide Dislocation business Diode |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(94)90072-8 |
| Popis: | Transmission electron microscopy investigations show that dislocations nucleated during the processing of InGaAs/GaAs laser diodes and developed under high internal stress during laser operation are the primary sources of rapid degradation processes. Point defects can be generated during the metallo-organic vapour phase epitaxy growth procedure and are potential sources for gradual degradation. We have correlated the occurrence of such point defects with the growth interruption time, by measuring the carrier lifetime τ eff , its non-radiative part τ nr and the performance of broad-area lasers. Laser diodes manufactured from epitaxial material grown under optimized conditions show a high long-term stability. |
| Databáze: | OpenAIRE |
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