Prediction of hydrogenated group IV-V hexagonal binary monolayers
| Autor: | Mohammad Ali Mohebpour, Meysam Bagheri Tagani, Sahar Izadi Vishkayi, Shobair Mohammadi Mozvashi |
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| Rok vydání: | 2020 |
| Předmět: |
Materials for devices
Materials science Silicon Band gap lcsh:Medicine Binary compound chemistry.chemical_element 02 engineering and technology Substrate (electronics) Linear dichroism 01 natural sciences Article chemistry.chemical_compound 0103 physical sciences Monolayer Condensed-matter physics lcsh:Science 010306 general physics Nanoscale materials Multidisciplinary business.industry lcsh:R 021001 nanoscience & nanotechnology Semiconductor chemistry Chemical physics lcsh:Q 0210 nano-technology business Photocatalytic water splitting Materials for optics |
| Zdroj: | Scientific Reports, Vol 10, Iss 1, Pp 1-14 (2020) Scientific Reports |
| ISSN: | 2045-2322 |
| Popis: | Group IV and V monolayers are very crucial 2D materials for their high carrier mobilities, tunable band gaps, and optical linear dichroism. Very recently, a novel group IV–V binary compound, $${\hbox {Sn}}_2{\hbox {Bi}}$$ Sn 2 Bi , has been synthesized on silicon substrate, and has shown very interesting electronic properties. Further investigations have revealed that the monolayer would be stable in freestanding form by hydrogenation. Inspired by this, by means of first-principles calculations, we systematically predict and investigate eight counterparts of $${\hbox {Sn}}_2{\hbox {Bi}}$$ Sn 2 Bi , namely $${\hbox {Si}}_2{\hbox {P}}$$ Si 2 P , $${\hbox {Si}}_2{\hbox {As}}$$ Si 2 As , $${\hbox {Si}}_2{\hbox {Sb}}$$ Si 2 Sb , $${\hbox {Si}}_2{\hbox {Bi}}$$ Si 2 Bi , $${\hbox {Ge}}_2{\hbox {P}}$$ Ge 2 P , $${\hbox {Ge}}_2{\hbox {As}}$$ Ge 2 As , $${\hbox {Ge}}_2{\hbox {Sb}}$$ Ge 2 Sb , and $${\hbox {Ge}}_2{\hbox {Bi}}$$ Ge 2 Bi . The cohesive energies, phonon dispersions, and AIMD calculations show that, similar to $${\hbox {Sn}}_2{\hbox {Bi}}$$ Sn 2 Bi , all of these freestanding monolayers are stable in hydrogenated form. These hydrogenated monolayers are semiconductors with wide band gaps, which are favorable for opto-electronic purposes. The $${\hbox {Si}}_2{\hbox {YH}}_2$$ Si 2 YH 2 and $${\hbox {Ge}}_2{\hbox {YH}}_2$$ Ge 2 YH 2 structures possess indirect and direct band gaps, respectively. They represent very interesting optical characteristics, such as good absorption in the visible region and linear dichroism, which are crucial for solar cell and beam-splitting devices, respectively. Finally, the $${\hbox {Si}}_2{\hbox {SbH}}_2$$ Si 2 SbH 2 and $${\hbox {Si}}_2{\hbox {BiH}}_2$$ Si 2 BiH 2 monolayers have suitable band gaps and band edge positions for photocatalytic water splitting. Summarily, our investigations offer very interesting and promising properties for this family of binary compounds. We hope that our predictions open ways to new experimental studies and fabrication of suitable 2D materials for next generation opto-electronic and photocatalytic devices. |
| Databáze: | OpenAIRE |
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