Investigation of leakage current of AlGaN/GaN HEMTs under pinch-off condition by electroluminescence microscopy
| Autor: | Oliver Ambacher, Reza Behtash, F. Bourgeois, M. Baeumler, Vladimir Polyakov, Paul J. van der Wel, K. Riepe, Rudiger Quay, Helmer Konstanzer, Wilfried Pletschen, Patrick Waltereit, T. Rodle, Michael Dammann, Wolfgang Bronner, M. Casar, Jos Klappe, Michael Mikulla, F. Gutle |
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| Přispěvatelé: | Publica |
| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: |
leakage current
Materials science business.industry Transistor electroluminescence microscopy Gallium nitride High-electron-mobility transistor AlGaN/GaN HEMT Electroluminescence Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Optics chemistry law Electric field Materials Chemistry Pinch Optoelectronics Electrical and Electronic Engineering Electric current business Leakage (electronics) |
| Popis: | Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional to the leakage current and independent of gate width for the devices under study. The slope of the integrated EL–leakage current dependence is determined by the electrical field in the source–drain direction. The influence of the GaN cap thickness is small or even negligible for higher drain bias. Stress during accelerated aging results in enhanced degradation for areas of enhanced leakage current and/or electric field values. |
| Databáze: | OpenAIRE |
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