Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate
| Autor: | B. Grimbert, Nathalie Rolland, Farid Medjdoub, Malek Zegaoui, N. Waldhoff, Paul-Alain Rolland |
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| Přispěvatelé: | Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF) |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Transconductance high transconductance Gallium nitride 02 engineering and technology Substrate (electronics) Noise figure 01 natural sciences 7. Clean energy Noise (electronics) law.invention [SPI]Engineering Sciences [physics] chemistry.chemical_compound law AlN/GaN high-electron-mobility transistors (HEMTs) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering noise figure 010302 applied physics business.industry Si substrate Amplifier Transistor 020206 networking & telecommunications Cutoff frequency Electronic Optical and Magnetic Materials high output current density chemistry Optoelectronics business |
| Zdroj: | IEEE Electron Device Letters IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩ IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2011, 32, pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩ |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | Microwave noise performance of state-of-the-art AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100-mm Si substrate has been investigated. DC and RF measurements show the outstanding potential of this structure for high-power millimeter-wave (mmW) applications. A maximum output current density of about 2 A/mm, together with a low gate leakage current, and a record GaN-on-Si extrinsic transconductance above 600 mS/mm are demonstrated. The current gain cutoff frequency fT and the maximum oscillation frequency fmax were 85 and 103 GHz, respectively, with a 0.16-μm gate length. At VDS = 4 V, the device exhibits a minimum noise figure (NFmin) of 1 dB (1.8 dB) with an associated gain (GA) of 12 dB (10 dB) at 10 GHz (18 GHz) favorably comparable to the best reported GaN-on-Si HEMTs. These results show that AlN/GaN HEMTs grown on silicon substrate are promising for the integration of cost effective, low noise, and high power mmW amplifiers. |
| Databáze: | OpenAIRE |
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