Monte-Carlo simulation of MOSFETs with band offsets in the source and drain
| Autor: | Simon Deleonibus, Claudio Fiegna, Pierpaolo Palestri, Mireille Mouis, G. Le Carval, Maud Vinet, Enrico Sangiorgi, Marco Braccioli, Thierry Poiroux |
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| Přispěvatelé: | M. Braccioli, P. Palestri, M. Mouis, T. Poiroux, M. Vinet, G. Le Carval, C. Fiegna, E. Sangiorgi, S. Deleonibus |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Computer simulation business.industry CMOS Monte Carlo method Electrical engineering Silicon on insulator Heterojunction Drain-induced barrier lowering HETEROJUNCTIONS Condensed Matter Physics Electrostatics Band offset Electronic Optical and Magnetic Materials MONTE CARLO MOSFET Materials Chemistry NUMERICAL SIMULATION Optoelectronics DOUBLE GATE MOSFET Electrical and Electronic Engineering business |
| Zdroj: | Solid-State Electronics. 52:506-513 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2007.10.038 |
| Popis: | Full-band Monte-Carlo simulations of short channel double-gate SOI nMOSFETs were used to assess possible enhancement of drain current in devices featuring a conduction band offset between the source and the channel as those obtained using non-conventional source/drain materials. We found that the coupling between carrier transport and device electrostatics tends to balance the enhancement of charge injection provided by the band discontinuity, so that the largest contribution to the current enhancement given by alternative S/D materials is due to the strain that they induce in the channel. |
| Databáze: | OpenAIRE |
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