Multi-Physical Models of Bending Characteristics on the Double-Clamped Beam Switch for Flexible Electronic Devices Application
| Autor: | Zhiqiang Zhang, Meng Nie, Kang Wang, Lei Han, Xiaodong Huang, Ruijie Qin, Lijun Chen |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
multi-physical models MEMS switch 02 engineering and technology Substrate (electronics) Bending Curvature lcsh:Chemical technology 01 natural sciences Biochemistry Article Analytical Chemistry 0103 physical sciences lcsh:TP1-1185 Electrical and Electronic Engineering Instrumentation double-clamped beam 010302 applied physics Physical model Reflection loss Mechanics 021001 nanoscience & nanotechnology bending characteristics Atomic and Molecular Physics and Optics flexible 0210 nano-technology Microwave Beam (structure) Voltage |
| Zdroj: | Sensors, Vol 20, Iss 7074, p 7074 (2020) Sensors (Basel, Switzerland) Sensors Volume 20 Issue 24 |
| ISSN: | 1424-8220 |
| Popis: | In this paper, multi-physical models of bending characteristics, including the static, dynamic and microwave models, are firstly proposed for the double-clamped beam switch based on flexible substrate. Both simulated and experimental verification have been carried out to prove that the changing regularity of the driving voltage and time of the switch is inversely proportional with the increase in the bending curvature of the flexible substrate. The microwave performance of the switch at the ON state is found to get worse with the increase in the bending curvature. The measured results indicate that when the bending curvature increases from 0 m&minus 1 to 28.6 m&minus 1, the measured driving voltage decreases from 90.0 V to 72.6 V with the error of 5.9% compared with the calculated results. The measured driving time decreases from 52.4 &mu s to 35.6 &mu s with the error of 16.7% compared with the calculated results. When the substrate bending curvature increases from 0 m&minus 1, the measured reflection loss S11 of the switch gradually deteriorates from &minus 27.1 dB to &minus 22.0 dB with the error of 1.3 dB corresponding to the calculated results at 10 GHz. All the simulated and experimental results are consistent with the theoretical calculated results. |
| Databáze: | OpenAIRE |
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