Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition
| Autor: | Cyril Robinson Azariah John Chelliah, Rajesh Swaminathan |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Binary number 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Pulsed laser deposition Metal visual_art 0103 physical sciences visual_art.visual_art_medium Optoelectronics Thin film 0210 nano-technology business |
| Popis: | The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures. |
| Databáze: | OpenAIRE |
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