A compact explicit DC model for short channel Gate-All-Around junctionless MOSFETs
| Autor: | Fernando Avila-Herrera, Antonio Cerdeira, Benjamin Iniguez, Francois Lime |
|---|---|
| Přispěvatelé: | Nanoelectronic and Photonic Systems, Enginyeria Electrònica, Elèctrica i Automàtica, Universitat Rovira i Virgili |
| Rok vydání: | 2017 |
| Předmět: |
Engineering
Computation 02 engineering and technology Channel models 01 natural sciences compact model 0103 physical sciences MOSFET Materials Chemistry Electronic engineering gate-all-around (GAA) MOSFET Electrical and Electronic Engineering Drain current Enginyeria electrònica 0038-1101 010302 applied physics drain current Transistors MOSFET business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Ingeniería electrónica 0210 nano-technology business Communication channel |
| Zdroj: | Solid-State Electronics |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2017.02.004 |
| Popis: | Filiació URV: SI DOI: 10.1016/j.sse.2017.02.004 URL: http://www.sciencedirect.com/science/article/pii/S0038110117301077 Memòria In this paper we provide solutions to update a long channel model in order to take into account the short channel effects. The presented model is for the junctionless GAA MOSFETs. The resulting model is analytical, explicit and valid for depletion and accumulation regimes, and consists of simple physically based equations, for better understanding of this device, and also easier implementation and better computation speed as a compact model. The agreement with TCAD simulations is very good. |
| Databáze: | OpenAIRE |
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