The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium
| Autor: | R Djordje Lazarevic, J Srboljub Stankovic, D Marija Obrenovic, M Nenad Kartalovic |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon gamma radiation Analytical chemistry chemistry.chemical_element silicon Germanium Neutron radiation Radiation Monte-Carlo method Monocrystalline silicon germanium X-radiation Nuclear Energy and Engineering chemistry Impurity neutron radiation Absorbed dose radiation effects lcsh:QC770-798 lcsh:Nuclear and particle physics. Atomic energy. Radioactivity Irradiation Safety Risk Reliability and Quality |
| Zdroj: | Nuclear Technology and Radiation Protection, Vol 31, Iss 1, Pp 97-101 (2016) Nuclear technology and radiation protection |
| ISSN: | 1452-8185 1451-3994 |
| Popis: | The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation. [Projekat Ministarstva nauke Republike Srbije, br. 171007] |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|