Integrated tunneling sensor for nanoelectromechanical systems

Autor: Sadewasser, Sascha, Abadal Berini, Gabriel, Barniol i Beumala, Núria, Dohn, S., Boisen, A., Fonseca Chácharo, Luis Antonio, Esteve, Jaume, American Physical Society
Jazyk: angličtina
Rok vydání: 2006
Předmět:
Zdroj: Sadewasser, S, Abadal, G, Barniol, N, Dohn, S & Boisen, A 2006, ' Integrated tunneling sensor for nanoelectromechanical systems ', Applied Physics Letters, vol. 89, no. 17, pp. 173101 . https://doi.org/10.1063/1.2362593
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
DOI: 10.1063/1.2362593
Popis: In view of the outstanding performance of polycrystalline thin film solar cells on the basis of Cu Ia Se2, the electrical activity at grain boundaries currently receives considerable attention. Recently, Kelvin probe force microscopy KPFM has been applied to characterize the properties of individual grain boundaries, observing a drop in the work function in many cases. We present finite element simulations of the electrostatic forces to assess the experimental resolution of KPFM. Depending on the tip sample distance, the observed drop in the work function amounts to only a fraction of the real potential drop. The simulations are considered for different grain boundary models and consequences for the quantitative evaluation of experimental results are discussed
Databáze: OpenAIRE