Integrated tunneling sensor for nanoelectromechanical systems
Autor: | Sadewasser, Sascha, Abadal Berini, Gabriel, Barniol i Beumala, Núria, Dohn, S., Boisen, A., Fonseca Chácharo, Luis Antonio, Esteve, Jaume, American Physical Society |
---|---|
Jazyk: | angličtina |
Rok vydání: | 2006 |
Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Tunneling Capillary action FABRICATION Image sensors Nanotechnology symbols.namesake Van der Waals forces Electrostatics Image sensor Electrodes Nanoelectromechanical systems Quantum tunnelling ATOMIC-FORCE MICROSCOPY Microelectromechanical systems business.industry Renewable energies Micromachining Surface micromachining Transducer symbols Silicon detectors Optoelectronics MASS DETECTION van der Waals force business Infrared detectors |
Zdroj: | Sadewasser, S, Abadal, G, Barniol, N, Dohn, S & Boisen, A 2006, ' Integrated tunneling sensor for nanoelectromechanical systems ', Applied Physics Letters, vol. 89, no. 17, pp. 173101 . https://doi.org/10.1063/1.2362593 Dipòsit Digital de Documents de la UAB Universitat Autònoma de Barcelona |
DOI: | 10.1063/1.2362593 |
Popis: | In view of the outstanding performance of polycrystalline thin film solar cells on the basis of Cu Ia Se2, the electrical activity at grain boundaries currently receives considerable attention. Recently, Kelvin probe force microscopy KPFM has been applied to characterize the properties of individual grain boundaries, observing a drop in the work function in many cases. We present finite element simulations of the electrostatic forces to assess the experimental resolution of KPFM. Depending on the tip sample distance, the observed drop in the work function amounts to only a fraction of the real potential drop. The simulations are considered for different grain boundary models and consequences for the quantitative evaluation of experimental results are discussed |
Databáze: | OpenAIRE |
Externí odkaz: |