Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf
| Autor: | Tang, Tianyi, zhan, wenkang, SHEN, Chao, li, manyang, XU, Bo, Wang, Zhanguo, Zhao, Chao |
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| Rok vydání: | 2022 |
| DOI: | 10.6084/m9.figshare.21641411.v1 |
| Popis: | Details of the surface morphology of the GaSb epilayer based on AlSb nucleation layer with different V/III flux ratios and temperatures; GaSb epilayer grown at different temperatures; the surface morphology of the GaSb epilayer with different thickne |
| Databáze: | OpenAIRE |
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