A 7T-NDR Dual-Supply 28-nm FD-SOI Ultra-Low Power SRAM With 0.23-nW/kB Sleep Retention and 0.8 pJ/32b Access at 64 MHz With Forward Back Bias
| Autor: | Adrian Kneip, David Bol |
|---|---|
| Přispěvatelé: | UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | IEEE Transactions on Circuits and Systems Part 1: Regular Papers, Vol. 70, no.3, p. 1311-1323 (2023) |
| ISSN: | 1558-0806 1549-8328 |
| DOI: | 10.1109/tcsi.2022.3230984 |
| Popis: | This work presents a 16kB ultra-low power (ULP)SRAM macro in 28nm FD-SOI with high energy efficiency in active mode and ultra-low leakage (ULL) in sleep mode, embedded in the SleepRider micro-controller unit (MCU) intended for IoT edge applications. The proposed SRAM integrates custom 7T ULL bitcells based on negative differential resistance (NDR) structures and a pMOS-only write port, achieving 2.1x lower area than previous NDR-based bitcells. A dual-supply strategy combined with negative-wordline write-assist concurrently provides worst-case data retention and correct write operations, up to the 64-MHz MCU target frequency. The SRAM macro periphery combines several low-power techniques to extract the full potential of the novel 7T bitcells, reaching an unprecedented speed-energy-leakage optimum with only 2.5% area overhead. Adaptive forward body biasing (FBB) further improves active mode performance while ensuring robustness against PVT variations. Measurement results showcase a minimum energy point of 0.78pJ per 32b access (assuming 50% read/write) at 0.5V and 64MHz. Moreover, leakage power drops from 296nW/kB at 0.5V in idle conditions to 0.23nW/kB in sleep at the 0.46V data retention voltage (DRV), yielding more than 1000x leakage reduction. As such, the proposed SRAM achieves an excellent trade-off between area, leakage and energy in the 10-to-100MHz frequency range. |
| Databáze: | OpenAIRE |
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