Processing and Characterization of MOS Capacitors Fabricated on 2°-Off Axis 4H-SiC Epilayers
| Autor: | Michael Krieger, Thierry Chassagne, Marcin Zielinski, Marilena Vivona, Alexandra Gkanatsiou, Fabrizio Roccaforte, Tomasz Sledziewski, Patrick Fiorenza |
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| Rok vydání: | 2016 |
| Předmět: |
4H-SiC
Fabrication Materials science Misorientation SiO2/SiC Oxide law.invention chemistry.chemical_compound law MOSFET Electronic engineering General Materials Science Range (particle radiation) business.industry Mechanical Engineering Interface states MOS Condensed Matter Physics Characterization (materials science) Capacitor chemistry Mechanics of Materials Optoelectronics 2°-off axis business Layer (electronics) |
| Zdroj: | Materials science forum 858 (2016): 663–666. doi:10.4028/www.scientific.net/MSF.858.663 info:cnr-pdr/source/autori:M. Vivona 1, P. Fiorenza 1, T. Sledziewski 2, A. Gkanatsiou 3, M. Krieger 2, T. Chassagne 4, M. Zielinski 4, F. Roccaforte 1/titolo:Processing and characterization of MOS capacitors fabricated on 2°-off axis 4H-SiC epilayers/doi:10.4028%2Fwww.scientific.net%2FMSF.858.663/rivista:Materials science forum/anno:2016/pagina_da:663/pagina_a:666/intervallo_pagine:663–666/volume:858 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.663 |
| Popis: | In this work, the electrical properties of SiO2/SiC interfaces onto a 2°-off axis 4H-SiC layer were studied and validated through the processing and characterization of metal-oxide-semiconductor (MOS) capacitors. The electrical analyses on the MOS capacitors gave an interface state density in the low 1×1012 eV-1cm-2 range, which results comparable to the standard 4°-off-axis 4H-SiC, currently used for device fabrication. From Fowler-Nordheim analysis and breakdown measurements, a barrier height of 2.9 eV and an oxide breakdown of 10.3 MV/cm were determined. The results demonstrate the maturity of the 2°-off axis material and pave the way for the fabrication of 4H-SiC MOSFET devices on this misorientation angle. |
| Databáze: | OpenAIRE |
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