Total ionizing dose effects of domestic SiGe HBTs under different dose rate
| Autor: | Xiaolong Li, Wang Xin, Mohan Liu, Ke Jiang, Qi Guo, Wu Lu, Wu-Ying Ma, Ming-Zhu Xun, Chengfa He |
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| Rok vydání: | 2015 |
| Předmět: |
Nuclear and High Energy Physics
Physics - Instrumentation and Detectors FOS: Physical sciences 02 engineering and technology 01 natural sciences Ionizing radiation law.invention chemistry.chemical_compound law 0103 physical sciences Radiation damage Irradiation Instrumentation Physics 010308 nuclear & particles physics Bipolar junction transistor Radiochemistry Transistor Gamma ray Astronomy and Astrophysics Instrumentation and Detectors (physics.ins-det) 021001 nanoscience & nanotechnology Silicon-germanium chemistry Absorbed dose 0210 nano-technology |
| DOI: | 10.48550/arxiv.1504.00758 |
| Popis: | The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed. |
| Databáze: | OpenAIRE |
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