Improved photoluminescence emission and gas sensor properties of ZnO thin films
| Autor: | F.A. La Porta, A. P. de Moura, W.B. Bastos, Larissa H. Oliveira, M. S. Li, Elson Longo, D. Berger, Ieda Lúcia Viana Rosa, Sergio Mazurek Tebcherani, José Arana Varela |
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| Přispěvatelé: | Universidade Estadual Paulista (Unesp), UTFPR, Universidade Federal de São Carlos (UFSCar), Universidade de São Paulo (USP) |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Band gap Thin films Process Chemistry and Technology Analytical chemistry Pressure-assisted thermal annealing 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Photoluminescence properties 0103 physical sciences Gas sensor properties ZnO CRISTALOGRAFIA Materials Chemistry Ceramics and Composites Thin film 0210 nano-technology Absorption (electromagnetic radiation) Ambient pressure |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP Scopus Repositório Institucional da UNESP Universidade Estadual Paulista (UNESP) instacron:UNESP |
| ISSN: | 0272-8842 |
| Popis: | Made available in DSpace on 2018-12-11T17:28:40Z (GMT). No. of bitstreams: 0 Previous issue date: 2016-09-01 In this article, we report a comparative study of the influence of pressure-assisted (1.72 MPa) versus ambient pressure thermal annealing on both ZnO thin films treated at 330 °C for 32 h. The effects of pressure on the structural, morphological, optical, and gas sensor properties of these thin films were investigated. The results show that partial preferential orientation of the wurtzite-structure ZnO thin films in the [002] or [101] planes is induced based on the thermal annealing conditions used (i.e., pressure assisted or ambient pressure). UV–vis absorption measurements revealed a negligible variation in the optical -band gap values for the both ZnO thin films. Consequently, it is deduced that the ZnO thin films exhibit different distortions of the tetrahedral [ZnO4] clusters, corresponding to different concentrations of deep and shallow level defects in both samples. This difference induced a variation of the interface/bulk-surface, which might be responsible for the enhanced optical and gas sensor properties of the pressure-assisted thermally annealed film. Additionally, pressure-assisted thermal annealing of the ZnO films improved the H2 sensitivity by a factor of two. UNESP Instituto de Química UTFPR Departamento de Química UFSCar Departamento de Química USP Instituto de Física de São Carlos UTFPR Departamento de Engenharia de Produção UNESP Instituto de Química |
| Databáze: | OpenAIRE |
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