Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3 Films Grown by Atomic Layer Deposition
| Autor: | Feng Xingyao, Chenxi Fei, Lu Zhao, Hongxia Liu, Shupeng Chen, Yongte Wang, Xing Wang |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) Band gap Refractive index Bandgap Nanotechnology 02 engineering and technology 01 natural sciences law.invention Diffusion Atomic layer deposition La2O3 Materials Science(all) X-ray photoelectron spectroscopy law 0103 physical sciences lcsh:TA401-492 General Materials Science Crystallization 010302 applied physics Nano Express 021001 nanoscience & nanotechnology Condensed Matter Physics Amorphous solid Carbon film Chemical engineering ALD lcsh:Materials of engineering and construction. Mechanics of materials 0210 nano-technology |
| Zdroj: | Nanoscale Research Letters Nanoscale Research Letters, Vol 12, Iss 1, Pp 1-7 (2017) |
| ISSN: | 1556-276X 1931-7573 |
| DOI: | 10.1186/s11671-017-2018-8 |
| Popis: | La2O3 films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3 films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3 films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3 films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3 films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively. |
| Databáze: | OpenAIRE |
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