Some aspects of the MOCVD growth of ZnO on sapphire using tert-butanol
| Autor: | Ouri Gorochov, C Thiandoume, Vicente Muñoz-Sanjosé, J. F. Rommeluère, Alain Lusson, Robert Triboulet, Vincent Sallet, J P Rivière, A. Rivière |
|---|---|
| Přispěvatelé: | Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de métallurgie physique (LMP), Université de Poitiers-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Institut de génétique humaine (IGH), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Institut Universitari de Ciencia dels Materials (ICMUV), Universitat de València (UV) |
| Rok vydání: | 2002 |
| Předmět: |
Materials science
02 engineering and technology Thermal treatment Chemical vapor deposition Substrate (electronics) Epitaxy 01 natural sciences Optics 0103 physical sciences General Materials Science Metalorganic vapour phase epitaxy [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] Thin film ComputingMilieux_MISCELLANEOUS [PHYS]Physics [physics] 010302 applied physics business.industry Mechanical Engineering 021001 nanoscience & nanotechnology Condensed Matter Physics Chemical engineering Mechanics of Materials Sapphire 0210 nano-technology business Layer (electronics) |
| Zdroj: | Materials Letters Materials Letters, Elsevier, 2002, 53 (1-2), pp.126-131. ⟨10.1016/S0167-577X(01)00558-4⟩ |
| ISSN: | 0167-577X |
| DOI: | 10.1016/s0167-577x(01)00558-4 |
| Popis: | The growth of ZnO on (0001) sapphire substrates using metalorganic chemical vapor deposition is reported. Diethylzinc and tertiarybutanol were used, respectively, as zinc and oxygen sources. Growth conditions are detailed such as the substrate temperature and the precursors partial pressures. The influence of the cleanness state of the MOCVD silica reactor is emphasized, since it modifies both layer quality and crystalline orientation, and since it also affects growth process steps like sapphire thermal treatment and buffer layer deposition. ZnO epitaxial layers are characterised by scanning electron microscopy (SEM) to assess the surface orientation and morphology, X-ray diffraction (XRD) and photoluminescence (PL). This last technique demonstrates the high optical quality of the ZnO epilayers. |
| Databáze: | OpenAIRE |
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