Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress
| Autor: | Edoardo Zanetti, Clarice Di Martino, Fabrizio Roccaforte, Mario S. Alessandrino, Mario Saggio, Alfio Russo, Carlo Venuto, Patrick Fiorenza, B. Carbone, Corrado Bongiorno, Filippo Giannazzo |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Dielectric strength business.industry 020502 materials Mechanical Engineering Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences Applied Physics (physics.app-ph) Physics - Applied Physics 02 engineering and technology Condensed Matter Physics 01 natural sciences Stress (mechanics) 0205 materials engineering Mechanics of Materials Reverse bias 0103 physical sciences MOSFET Optoelectronics General Materials Science Power MOSFET business Nanoscopic scale |
| Zdroj: | Materials Science Forum |
| ISSN: | 1662-9752 |
| Popis: | In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified. |
| Databáze: | OpenAIRE |
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