| Autor: |
Emilio Scalise, Massimo Zimbone, Anna Marzegalli |
| Přispěvatelé: |
Scalise, E, Zimbone, M, Marzegalli, A |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Popis: |
Inversion domain boundaries are extended defects affecting cubic silicon carbide (3C-SiC) layers grown on the on-axis (001) Si wafers. Their impact on the device performance is still debated and a clear connection to their electronic properties at the atomistic scale is still missing. By comparing the first-principles atomistic models and scanning transmission electron microscopy imaging, the most relevant structures of inversion domain boundaries laying both in the {110} and {111} planes are identified. Their calculated electronic structures shed light on the relevance that these extended defects may have in the degradation of the performances of the 3C-SiC devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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