Far-infrared study of impurity local modes in gallium-doped PbTe
Autor: | Dmitry Khokhlov, Nebojša Romčević, W. König, A. I. Belogorokhov, I.I. Ivanchik, Maja Romcevic |
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Rok vydání: | 1999 |
Předmět: |
Materials science
Physics::Optics chemistry.chemical_element 02 engineering and technology 01 natural sciences Spectral line Condensed Matter::Materials Science Far infrared Impurity 0103 physical sciences photoconductivity PbTe Gallium 010302 applied physics Coupling Condensed matter physics Photoconductivity Doping 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Reflection (mathematics) chemistry impurity 0210 nano-technology |
Zdroj: | Infrared Physics and Technology |
ISSN: | 1350-4495 |
Popis: | We present far-infrared reflection spectra and results of galvanomagnetic measurements of PbTe single crystals doped with gallium between 10 and 300 K. The analysis of the far-infrared reflection spectra was made by a fitting procedure based on the model of coupled oscillators. Together with the strong plasmon-phonon coupling we obtain three local modes of gallium at about 122, 166 and 192 cm(-1). The position of these modes depends of impurity center charge, and their intensity depends of temperature and of gallium concentration. Persistent photoconductivity effect was registered in the sample with 0.4 at.% Ga by galvanomagnetic and far-infrared measurements. (C) 1999 Elsevier Science B.V. All rights reserved. |
Databáze: | OpenAIRE |
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