A Novel Wide-Temperature-Range, 3.9 ppm/$^{\circ}$C CMOS Bandgap Reference Circuit

Autor:	Andreou, C. M., Koudounas, S., Georgiou, J.
Přispěvatelé:	Georgiou, J. [0000-0002-7474-5449]
Rok vydání:	2012
Předmět:	Materials science Bandgap voltage reference business.industry Electrical engineering Line regulation Atmospheric temperature range Temperature measurement law.invention CMOS law Operational amplifier Optoelectronics Electrical and Electronic Engineering Resistor business Temperature coefficient
Zdroj:	IEEE Journal of Solid-State Circuits IEEE J.Solid State Circuits
ISSN:	1558-173X 0018-9200
DOI:	10.1109/jssc.2011.2173267
Popis:	This paper presents an innovative CMOS Bandgap Reference Generator topology that leads to an improved curvature compensation method over a very wide temperature range. The proposed design was implemented in a standard 0.35 μm CMOS process. The compensation is performed by using only poly-silicon resistors. This is achieved by using a second Op-amp that generates a CTAT current, which is subsequently used to enhance the curvature compensation method. The performance of the circuit was verified experimentally. Measured results have shown temperature coefficients as low as 3.9 ppm/°C over a temperature range of 165°C ( -15°C to 150°C ) and temperature coefficients as low as 13.7 ppm/°C over an extended temperature range of 200°C (-50°C to 150°C ). In addition the circuit demonstrated very good line regulation performance for a broad range of supply voltages. The measured line regulation at room temperature is 0.039% V.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22528effc921b519bacfe6e4447392d0 https://doi.org/10.1109/jssc.2011.2173267 Zobrazit plný text záznamu